hf/rf ZONE Products for the week of July 7, 2003
Motorola says . . .
MRF5S9100/01: Plastic Packaging For 100-W 900-MHz
LDMOS Amplifiers
Industry Leading Performance and Cost-Effectiveness Designed
In
The industry's first 100W, 900MHz RF power transistors in plastic packaging are now available from Motorola, Inc. Expanding its portfolio of industry-leading RF semiconductor solutions for the wireless infrastructure market, Motorola's latest generation of RF power transistors is designed to enhance power capabilities, efficiency and ease-of-use for 900MHz cellular base station power amplifiers applications. Additionally, designers and equipment manufacturers can expect to benefit from manufacturing and system cost savings through higher yields and production margins.
The newest generation 900MHz product portfolio (900G3) leverages the performance advantages of Motorola's fifth generation RF LDMOS (Laterally Diffused Metal Oxide Silicon) die technology and offers several key advantages to aid designers in producing world-class amplifiers. Advantages include a 4 to 5 percentage point increase in efficiency over previous generations, higher output power capability, and up to 20 percent improvement in thermal resistance when compared to standard ceramic packaging.
"Motorola is extremely sensitive to the cost reduction requirements
being placed on our customers," said Lynelle McKay, vice president
and general manager of Motorola's RF & DSP Infrastructure Division.
"We continue to expand our RF plastic portfolio to offer exceptional
performance, while enabling our customers to benefit from savings in manufacturing
and overall system cost reductions."
analogZONE Says . . .
This is a major breakthrough in the development of plastic packages, reducing costs all round for an industry that is frantic to trim every penny from designs, but being unforgiving about reduced performance. The first devices at the higher power ranges are available in Motorola's wide-body TO-270 and TO-272. They are at the engineering release level which means that things can change before production starts but the indications are that the latest generation of LDMOS also has improved efficiencies.
The MRF5S9100M is a 880-MHz part (usable up to 1 GHz) rated at 100 W. It is optimized for CDMA operation and at 26-V supply it will produce 23 W with N-CDMA with a drain quiescent of 900 mA for 30% efficiency. The power gain is 17 dB and the adjacent channel power 750 kHz (30 kHz bandwidth) is -45 dBc
Similarly the MRF5S9101M is optimized for GSM/GSM EDGE operation and
produces 50 W with 40% efficiency.
Both parts are capable of handling a 5:1 VSWR at operational power and are
characterized with series equivalent large-signal impedance parameters.
Both parts are, literally, a shoe-in for new designs.
Engineering samples of the parts, plus a 60-W part (the MRF5S9101M) are available with production slated for Q4 2003. The MRF5S9060 M is priced at $23.86, the MRF5S9100M at $44.32 and the MRF5S9101M at $42.41, all in 100-k volumes.